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 MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT
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GCU40AB-90
HIGH POWER INVERTER USE PRESS PACK TYPE
GCU40AB-90 q Asymmetrical GCT unit q GCT and Gate driver are connected q ITQRM Repetitive controllable on-state current .................................. 4000A q IT(AV) Average on-state current .................... 1200A q VDRM Repetitive peak off-state voltage .................. 4500V q VRRM Repetitive peak reverse voltage ....................... 21V
APPLICATION Inverters, DC choppers, Induction heaters, DC to DC converters.
OUTLINE DRAWING
Dimensions in mm
(447)
(2.5)
(80)
(137) 2-M2x0.7
(230)
2-M4x0.7
(10)
(40)
(7.5) (19.7) (88) (30)
HIGT VOLTAGE
(80)
(105)
( 134)
(
(240)
(7.5)
Status LED's Green ,power supply Yellow ,GCT on command Red ,GK short Connector for power supply B5PS-VH(JST)
GATE DRIVER
TYPE
BU-E40
1
) 48
(85.72)
(81.13)
C 16-M3x0.5 (25.4) (12.7)
SERIAL 00000000-00
(85)
(50)
GCT THYRISTPR
(85)
34.50.5
(2.5)
Explanation of terminal numbers
1 5
850.2
3.50.2 2.20.2 DEPTH
(44)
(25.5) B Fiber optics input (HFBR-2528) (35.5) Fault signal output (HFBR-1528)
Fiber optics enter
(40.5)
581
26V 2V (AC rectangular)
~
~
Mar. 2002
MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT
. ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som
PR
INA ELIM
RY
GCU40AB-90
HIGH POWER INVERTER USE PRESS PACK TYPE
GCT PART (Type name : FGC4000BX-90DS) MAXIMUM RATINGS
Symbol VRRM VRSM VDRM VDSM VLTDS Symbol ITQRM IT(RMS) IT(AV) ITSM I2t diT/dt VFGM VRGM IFGM IRGM PFGM PRGM PFG(AV) PRG(AV) Tj Tstg -- -- Conditions Parameter -- Repetitive peak reverse voltage -- Non-repetitive peak reverse voltage Repetitive peak off-state voltage VGK = -2V VGK = -2V Non-repetitive peak off-state voltage Long term DC stability voltage VGK = -2V, = 100 Fit Parameter Repetitive controllable on-state current RMS on-state current Average on-state current Surge on-state current Current-squared, time integration Critical rate of rise of on-state current Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Peak reverse gate current Peak forward gate power dissipation Peak reverse gate power dissipation Average forward gate power dissipation Average reverse gate power dissipation Operation junction temperature Storage temperature Mounting force required Weight Conditions VDM = 4500V, VD = 2250V, VRG = 20V, LC = 0.3H Tj = 25/125C, With GU-E40 (see Fig. 1, 3) Applied for all condition angles f = 60Hz, sinewave = 180, Tf = 70C One half cycle at 60Hz, Tj = 125C Start VD = 2250V, IT = 4000A, Tj = 25/125C, f = 60Hz With GU-E40 (see Fig. 1,2 ) Voltage class 21 21 4500 4500 3600 Ratings 4000 1800 1200 25 2.6 x 106 1000 10 21 1000 3500 10 120 200 630 -20 ~ +125 -20 ~ +150 32 ~ 48 1500 Unit V V V V V Unit A A A kA A 2s A/s V V A A kW kW W W C C kN g
(Recommended value 40kN) Typical value
ELECTRICAL CHARACTERISTICS
Symbol VTM IRRM IDRM IGRM dv/dt tgt td Eon ts Eoff IGT VGT Rth(j-f) Parameter On-state voltage Repetitive peak reverse current Repetitive peak off-state current Reverse gate current Critical rate of rise of off-state voltage Turn-on time Turn-on delay time Turn-on switching energy Storage time Turn-off switching energy Gate trigger current Gate trigger voltage Thermal resistance Conditions IT = 4000A, Tj = 125C VRM = 21V, Tj = 125C VDM = 4500V, VGK = -2V, Tj = 125C VRG = 21V, Tj = 125C VD = 2250V, VGK = -2V, Tj = 125C (Expo. wave) VD = 2250V, IT = 4000A, di/dt = 1000A/s, Tj = 125C With GU-E40 (see Fig. 1, 2) VDM = 4500V, VD = 2250V, IT = 4000A VRG = 20V, Tj = 125C With GU-E40 VD = 24V, RL = 0.1, Tj = 25C DC method Junction to Fin Min -- -- -- -- 3000 -- -- -- -- (see Fig. 1, 3) -- -- -- -- Limits Typ -- -- -- -- -- -- -- 1.0 -- 13 -- -- -- Max 4.0 100 150 100 -- 3.0 1.0 -- 3.0 -- 2.5 1.5 0.011 Unit V mA mA mA V/s s s J/P s J/P A V K/W
Mar. 2002
MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT
. ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som
PR
INA ELIM
RY
GCU40AB-90
HIGH POWER INVERTER USE PRESS PACK TYPE
GATE DRIVER PART (Type name : GU-E40)
Symbol VC IC -- f tfd trd diG/dt IGM tW IG diGQ/dt Dmax Ta -- Rth(j-f) -- Parameter Conditions Min 25.2 -- -- -- -- -- 100 -- 5 10 -- -- -10 -- -- -- Limits Typ 28 -- -- -- -- -- -- 200 -- -- 6000 -- -- 5300 -- -- Max 32.2 5 -- 500 2.0 2.0 -- -- -- -- -- 100 +60 -- 0.012 -- Unit V A -- Hz s s A/s A s A A/s % C g K/W --
Power supply voltage (Note 1) AC rectangular, f = 15kHz ~ 100kHz or DC power supply Power supply current (Note 1) IT = 1500Arms, f = 500Hz, duty = 0.5 Optical fiber data link Transmitter : HFBR-1528 (HP) Control signal Receiver : HFBR-2528 (HP) IT = 1500Arms, duty = 0.5 Frequency Delay time of on gate current Ta = 25C Delay time of off gate current Ta = 25C Critical rate of rise of on gate current Peak on gate current Width of on high gate current Tj -10C On gate current Critical rate of rise of off gate current VRG= 20V Maximum duty Operation temperature (Recommend : 40C) Temperature With FGC4000BX-90DA Weight Thermal resistance With FGC4000BX-90DA (Junction to Fin) (Note 2) Status signal (Note 3)
VD
IT
VD
td tgt ts tfd trd diG/dt IGM IG td ; 0VRG ~ 0.9VD tgt ; 0VRG ~ 0.1VD ts ; 0VRG ~ 0.9IT diG/dt ; 0.1IGM ~ 0.9IGM tw ; 0VRG ~ 0.9IGM diGQ/dt ; 0.1IRG ~ 0.9IRG tfd ; 50%on signal ~ 0VRG trd ; 50%off signal ~ 0VRG
tw VRG Control signal diGQ/dt IGQ VRG
Fig. 1 Turn-on and Turn-off waveform
L ANL L(load) VD DUT VD DUT Lc CDi Cc FWDi Rc
Fig. 2 Turn-on test circuit
Fig. 3 Turn-off test circuit
(With clamp circuit)
Mar. 2002
MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT
. ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som
PR
INA ELIM
RY
GCU40AB-90
HIGH POWER INVERTER USE PRESS PACK TYPE
Note 1. Main current condition of GCT Thyristor is 1500Arms, duty = 0.5, f = 500Hz. 2. If GU-E40 and FGC4000BX-90DS are used together, Rth(j-f) becomes 0.012K/W. (Only FGC4000BX-90DS is used, Rth(j-f) becomes 0.011K/W) 3. Status signal from gate driver (1) Status signal of LED Green : Power supply Yellow : GCT on command Red : GK short (2) status signal of Optic Transmitter
Normal operation Control signal
Lower driver voltage (for on or off gate power supply value)
Status signal
Failure mode; Gate cathode short
Failure mode; Continuously turned off
Control signal
Status signal
No light
Light
Mar. 2002
MITSUBISHI GATE COMMUTATED TURN-OFF THYRISTOR UNIT
. ation nge. pecific ct to cha bje final s not a its are su is is ic lim e: Th tr Notice parame Som
PR
INA ELIM
RY
GCU40AB-90
HIGH POWER INVERTER USE PRESS PACK TYPE
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTIC 104 Eon VS IT (TYPICAL) 4.0
Condition di/dt=1000A/s
ON-STATE CURRENT IT (A)
7 5 3 2
TURN ON SWITCHING ENERGY Eon (J/P)
3.5 VD=2250V, Tj=125C 3.0 2.5 2.0 1.5 1.0 0.5 0 0 500 1000 1500 2000 2500 3000 3500 4000 TURN ON CURRENT IT (A)
Typ Max
103
7 5 3 2 Tj=125C Tj=25C
102
7 5 3 2
101
0
1
2
3
4
5
6
7
ON-STATE VOLTAGE VTM (V)
TURN OFF SWITCHING ENERGY Eoff (J/P)
Eoff VS IT (TYPICAL) 20 18 VD=2250V, VDM=VD+0.44xIT 16 Tj=125C, CC=6F, LC=0.3H 14 12 10 8 6 4 2 0 0 500 1000 1500 2000 2500 3000 3500 4000 TURN OFF CURRENT IT (A)
Typ Max 0.014
MAXIMUM THERMAL IMPEDANCE CHARACTERISTIC (JUNCTION TO FIN)
THERMAL IMPEDANCE Zth (C/W)
Condition
0.012 0.01 0.008 0.006 0.004 0.002
0 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 TIME (S)
Mar. 2002


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